SM-A-959137 by Advanced Micro Devices Inc With NSN 5962011887173 - Buy Now

Mfg Part Number: SM-A-959137	Alternate P/N: SMA959137	Manufacturer: Advanced Micro Devices Inc
NSN : 5962-01-188-7173	Item Name : microcircuitmemory	CAGE Code : 34335
FSC : 5962 Microcircuits Electronic

Thank you for your interest in the NSN 5962-01-188-7173 associated with the part number SM-A-959137 and FSC 5962 Microcircuits Electronic featured on Alpha Aerospace Parts. On this page, entities may request a quote for their comparisons on Microcircuitmemory items by Advanced Micro Devices Inc with CAGE Code 34335 or begin the purchasing process through the submission of a completed RFQ form. This entails providing details regarding one’s desired part quantities, target prices, estimated shipping time frames, and more, as applicable. Upon submitting a completed form for part number SM-A-959137 our representatives will utilize their market prowess to supply you with a personalized quote backed by rapid lead times and cost savings in just 15 minutes or less

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NSN Information for Part Number SM-A-959137 with NSN 5962-01-188-7173, 5962011887173

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-188-7173 Item Description: Microcircuitmemory	5962	011887173	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Sm-A-959137	3	2	3

Characteristics Data of NSN 5962-01-188-7173, 5962011887173

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH50 2 MILLIMETERS MINIMUM AND 51 3 MILLIMETERS MAXIMUM
MEMORY	ADAT	BODY WIDTH14 8 MILLIMETERS MINIMUM AND 15 6 MILLIMETERS MAXIMUM
MEMORY	ADAU	BODY HEIGHT2 0 MILLIMETERS MINIMUM AND 2 6 MILLIMETERS MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 5 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATION5820-01-145-4902 MODEMCABLE DRI
MEMORY	CBBL	FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION AND ELECTROSTATIC SENSITIVE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN37 INPUT
MEMORY	CRHL	BIT QUANTITY2048
MEMORY	CSWJ	WORD QUANTITY256
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT